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Characteristics of Hafnium Silicate Films Deposited on Si by Atomic Layer Deposition Process

소개글 Author: Lee Jung-Chan, Kim Kwang-Sook, Jeong Seok-Won, Roh Yonghan Organization: Lee Jung-Chan; Kim Kwang-Sook; Jeong Seok-Won; Roh Yonghan Publish: Transactions on Electrical and Electronic Materials Volume 12, Issue3, p127~130, 25 June 2011
태그
  • Metal-oxide-semiconductor capacitor
  • Atomic layer deposition
  • high-k
  • HfSixOy
  • Interfacial layer regrowth
  • O2 annealing