ONO Ruptures Caused by ONO Implantation in a SONOS Non-Volatile Memory Device

전체 > 전체

ONO Ruptures Caused by ONO Implantation in a SONOS Non-Volatile Memory Device

소개글 Author: Kim Sang-Yong, Kim Il-Soo Organization: Kim Sang-Yong; Kim Il-Soo Publish: Transactions on Electrical and Electronic Materials Volume 12, Issue1, p16~19, 28 Feb 2011

태그

Polysilicon-oxide-nitride-oxide-silicon
Implantation
Non-volatile semiconductor memory devices
EEPROM (Electrically erasable programmable read-only memory)
Threshold voltage

저작시기 2011-02월

등록일 2016-07-14

파일형식 pdf

페이지 4페이지

가격 0원