Optimization of Ohmic Contact Metallization Process for AlGaN GaN High Electron Mobility Transistor

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Optimization of Ohmic Contact Metallization Process for AlGaN GaN High Electron Mobility Transistor

소개글 Author: Wang Cong, Cho Sung-Jin, Kim Nam-Young Organization: Wang Cong; Cho Sung-Jin; Kim Nam-Young Publish: Transactions on Electrical and Electronic Materials Volume 14, Issue1, p32~35, 25 Feb 2013

태그

AlGaN/GaN
High electron mobility transistor (HEMT)
Ohmic contact
SiC substrate
Reactive-ion etching (RIE)

저작시기 2013-02월

등록일 2016-07-15

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